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| ECO-PACTM 2 CoolMOS Power MOSFET PSHM 40D/06 in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base ID25 VDSS RDSon = 38 A = 600 V = 70 m 1) L4 L6 L9 P18 R18 K12 F10 NTC K13 Preliminary Data Sheet MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR Conditions TVJ = 25C to 150C TC = 25C TC = 90C VDS < VDSS; IF 50A;diF/dt 200A/s TVJ = 150C ID = 10 A; L = 36 mH; TC = 25C ID = 20 A; L = 5 H; TC = 25C Maximum Ratings 600 V 20 V 38 A 25 A 6 V/ns 1.8 1 J mJ Features * ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density UL registered, E148688 * Symbol Conditions RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID90 70 m VDS = 20 V; ID = 3 mA; 3.5 5.5 V VDS = VDSS; VGS = 0 V; TVJ = 25C 25 A TVJ = 125C 60 A VGS = 20 V; VDS = 0 V 100 nA 220 nC 55 nC VGS= 10 V; VDS = 350 V; ID = 50 A 125 nC 30 ns 95 ns VGS= 10 V; VDS = 380 V; 100 ns ID = 25 A; RG = 1.8 10 ns (reverse conduction) IF = 20 A; VGS = 0 V 0.9 1.1 V per MOSFET 0.45 K/W * * Applications * * * * * * * * * * 1) Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Data according to IEC 60747 refer to a single diode or transistor unless otherwise stated Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. CoolMOS is a trademark of Infineon Technologies AG. 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 Reverse diodes (FRED) Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 18.5 A 12.0 A Dimensions in mm (1 mm = 0.0394") Symbol VF IRM t rr RthJC RthJH Conditions Characteristic Values min. typ. max. IF = 15 A; TVJ = 25C 2.58 2.64 V TVJ = 125C 1.8 V IF = 10 A; diF/dt = 400 A/s; TVJ = 125C 7 A VR = 300 V; VGE = 0 V 70 ns 3.5 K/W with heatsink compound (0.42 K/m.K; 50 m) 7 K/W Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 5.25 k 3375 K Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight Conditions Maximum Ratings -40...+150 -40...+125 3600 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2 IISOL 1 mA; 50/60 Hz; t = 1 s Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 mm 11.2 mm 24 g 2003 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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